An Equivalent MOSFET Cell Using Adaptively Biased Source-Coupled Pair
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概要
- 論文の詳細を見る
The square-law characteristics of MOSFET in the saturation region have a parameter of threshold voltageV_T. However, it introduces some complexities to the circuit design since it depends on kinds of MOS technology and cannot be controlled easily. In this paper, we show an equivalent MOSFET cell which has V_T-programming capability and some application instances based on it. The simulation is carried out using CMOS O.8★m n-well technology and the results have shown the feasibility of the proposed structure.
- 社団法人電子情報通信学会の論文
- 2003-02-01
著者
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Hyogo Akira
Tokyo University Of Science
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Sekine Keitaro
Tokyo University Of Science
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SATO Hieoki
Tokyo University of Science
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