HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits.

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概要

• 論文の詳細を見る

• We have fabricated a prototype of interface devices between SFQ and CMOS circuits using HTS quasi-particle injection devices. By the injection of quasi-particles, the bridge area becomes resistive and high voltage appears at the drain electrode. As a test of device operation, we applied the signal of a function generator to the gate electrode and observed that the device successfully repeated on/off operation. We also succeeded in explaining the device characteristics by considering the thermal effects.

• 社団法人電子情報通信学会の論文
• 2002-03-01

著者

• Shiga Hidehiro

  Okabe Laboratory Rcast The University Of Tokyo

• Okabe Yoichi

  Okabe Laboratory Rcast The University Of Tokyo

関連論文

• HTS Quasi-Particle Injection Devices for Interfaces between SFQ and CMOS Circuits.

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