Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• Fluctuations of three device parameters (T_ox, N_sub, ΔL) based on process fluctuations are taken as cause of device/circuit performances. In-line measured device parameters are approximated by Gaussian functions, and their 2σ values are assigned as boundaries of the performance fluctuations. Measured distributions both for device and curcuit performances are successfully reproduced.

• 社団法人電子情報通信学会の論文
• 1999-06-25

著者

• Suetake Masami

  The Department Of Electrical Engineering Hiroshima University

• Miura-mattausch Mitiko

  The Department Of Electrical Engineering Hiroshima University

• PRIGGE Odin

  Siemens AG, Semiconductor Division

• Prigge Odin

  Siemens Ag Semiconductor Division

関連論文

• Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations (Special Issue on TCAD for Semiconductor Industries)

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