Non-uniform Multi-Layer IC Interconnect Transmission Line Characterization for Fast Signal Transient Simulation of High-Speed/High-Density VLSI Circuits (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• A new IC interconnect transmission line parameter determination methodology and a novel fast simulation technique for non-uniform transmission lines are presented and verified. The capacitance parameter is a strong function of ashielding effect between the layers, while silicon substrate has a substantial effect on inductance parameter. Thus, they are taken into account to determine the parameters. Then the virtual straight-line-based per unit length parameters are determined in order to perform the fast transient simulation of the non-uniform transmission lines. It was shown that not only the inductance effect due to a silicon substrate but also the shielding effect between the layers are too significant to be neglected. Further, a model order reduction technique is integrated into Berkeley SPICE in order to demonstrate that the virtual straight-line-based per-unit-length paratneters can be efficiently employed for the fast transient response simulation of the complicated mult-layer interconnect structures. Since the methodology is very efficient as well as accurate, it can be usefully employed for IC CAD tools of high-performance VLSI circuit design.

• 1999-06-25

著者

• Eo Yungseon

  The Integrated Electronics Laboratory Department Of Electronic Engineering Hanyang University

• Jin Woojin

  The Integrated Electronics Laboratory Department Of Electronic Engineering Hanyang University

• YOO Hanjong

  the Integrated Electronics Laboratory, Department of Electronic Engineering, Hanyang University

• Yoo H

  Information And Communications Univ. Daejon Kor

関連論文

• Non-uniform Multi-Layer IC Interconnect Transmission Line Characterization for Fast Signal Transient Simulation of High-Speed/High-Density VLSI Circuits (Special Issue on TCAD for Semiconductor Industries)

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