Modeling of Channel Boron Distribution in Deep Sub-0.1μm n-MOSFETs (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [μm] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short channel effect becomes less significant in the deep sub-0.1 [μm] n-MOSFETs. It has been also found that the sheet charge distribution responsible for the reverse short channel effect is localized within a distance of 100 [nm] from the source/drain-extension junction

• 社団法人電子情報通信学会の論文
• 1999-06-25

著者

• Kumashiro Shigetaka

  The Ulsi Device Development Laboratories Nec Corporation

• Sakamoto Hironori

  The Ulsi Device Development Laboratories Nec Corporation

• TAKEUCHI Kiyoshi

  the Silicon Systems Research Laboratories, NEC Corporation

• Takeuchi Kiyoshi

  The Silicon Systems Research Laboratories Nec Corporation

• KUMASHIRO Shigetaka

  the ULSI Device Development Laboratories, NEC Corporation

関連論文

• Modeling of Channel Boron Distribution in Deep Sub-0.1μm n-MOSFETs (Special Issue on TCAD for Semiconductor Industries)
• Efficient Transient Device Simulation with AWE Macromodels and Domain Decomposition (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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