Temperature Characterisitics of Lateral Power MOS FET Formed by Solid Phase Epitaxy

概要

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We fabricated a new lateral Power MOS FET with an SOI structure formed by a solid phase epitaxy method which has a buried gate under the channel layer and a trench gate/drain.We studied the temperature dependence of the Vg-Id characteristic and Vd-Id characteristic in the temperature range of from 27℃ to 150℃ .In the Vd-Id characteristic, the drain current decreases as the temperature increases in the saturation region, but the drain current increase as the temperature increases in the linear region.Zero-temperature-coefficient bias point of Vg-Id characteristic was 0.3 V.And, the threshold voltage variation was -2.8 mV/℃.In the Vd-Id characteristic, the drain current decreases as the temperature increases.The specific on-resistance was obtain in the linear region of the Vd-Id characteeristis.The specific on-resistance variation was 0.3 mW・mm^2/℃.The temperature characteristics of this device are as good as those of the conventional MOS FET.
社団法人電子情報通信学会の論文
1998-09-25