Performance of GaAs MESFET Photodetectors with Wide Drain-to-Gate Distances in Subcarrier Optical Transmission

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概要

• 論文の詳細を見る

• This paper presents the performance of a proposed GaAs MESFET photodetector with wide drain-to-gate distances for improving the optical coupling efficiency in subcarrier optical transmission. Principle and design parameters of the proposed MESFET are described. Link gain, CNR, and BER, are experimentally investigated as functions of the drain-to-gate distance. It is experimentally found that the proposed MESFET improves the link gain by 8.5dB compared to the conventional structure at the subcarrier frequency of 140MHz. Discussions are also included compared to PIN-PD.

• 社団法人電子情報通信学会の論文
• 1997-01-25

著者

• Ohtsuka Hiroyuki

  Radio Systems Laboratory Ntt Wireless Systems Laboratories

• SHIMIZU Tatsuya

  Radio Systems Laboratory, NTT Wireless Systems Laboratories

• Ohtsuka Hiroyuki

  Radio Systems Laboratory 906c Ntt Wireless Systems Laboratories

• NAKATSUGAWA Masashi

  Radio Systems Laboratory, NTT Wireless Systems Laboratories

• Nakatsugawa Masashi

  Radio Systems Laboratory Ntt Wireless Systems Laboratories

• Shimizu Tatsuya

  Radio Systems Laboratory Ntt Wireless Systems Laboratories

関連論文

• Predistorter Implementation to SLD in Fiber-Optic Wireless Systems (Special Issue on Optomicrowave Techniques and Their Applications)
• BER Performance of Optically Controlled MESFETs as Photodetectors (Special Issue on Optomicrowave Techniques and Their Applications)
• Performance of GaAs MESFET Photodetectors with Wide Drain-to-Gate Distances in Subcarrier Optical Transmission
• Fiber-Oriented Wireless Systems for Intelligent Networks (Special Issue on Advanced Adaptive Radio Communication Technologies)

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