A Low Dark Current CCD Linear Image Sensor

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概要

• 論文の詳細を見る

• A low dark current CCD linear image sensor with pixels consisting of a photodiode and a storage area has been developed. In order to suppress the dark current, the wafer process has been improved. An impurity profile of a photodiode was modified to minimize depletion width, which was monitored by the photodiode potential. Surface states under the storage gate were decreased by hydrogen annealing with plasma-deposited silicon nitride as an inter metal dielectric film. As the isolation dose decreased, the dark current both in the photodiode and in the storage region were effectively suppressed. Finally, low dark currents of 5pA/cm^2 at photodiode and 120pA/cm^2 at storage area were obtained.

• 社団法人電子情報通信学会の論文
• 1997-01-25

著者

• Kunori Yuichi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kunori Yuichi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Yamawaki Masao

  Ulsi Laboratory Mitsubishi Electric Corporation

関連論文

• Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• A Low Dark Current CCD Linear Image Sensor

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