Failure Analysis in Si Device Chips (Special Issue on LSI Failure Analysis)

スポンサーリンク

概要

• 論文の詳細を見る

• Recent developments and case studies regarding VLSI device chip failure analysis are reviewed. The key failure analysis techniques reviewed include EMMS (emission microscopy), OBIC (optical beam induced current), LCM (liquid crystal method), EBP (electron beam probing), and FIB (focused ion beam method). Further, future possibilities in failure analysis, and some promising new tools are introduced.

• 社団法人電子情報通信学会の論文
• 1994-04-25

著者

• Nikawa Kiyoshi

  A & E Technology Center Nec Corporation

• Nikawa Kiyoshi

  A &amp E Technology Center Nec Corporation

関連論文

• VLSI Fault Localization Using Electron Beam Voltage Contrast Image : Novel Image Acquisition and Localization Method
• Failure Analysis in Si Device Chips (Special Issue on LSI Failure Analysis)

スポンサーリンク