An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

• 論文の詳細を見る

• An efficient method which integrates a 2-D energy transport model, impact ionization model, gate current model, a discretized gate-capacitor EPROM model, and a postprocessing quasi-transient programming/erase method, was developed for deep-submicron EPROM/Flash device simulation. The predicted results showed on the average better than 90 accuracy, and it took only few minutes CPU time on a SUN/ SPARC2 to generate EPROM/Flash V_t shift curves.

• 社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Frey J

  The Department Of Electrical Engineering University Of Maryland College Park

• Peng Jack

  the Non-Volatile Technology Group, Integrated Technology Division, Advanced Micro Devices, inc,

• Longcor Steve

  the Non-Volatile Technology Group, Integrated Technology Division, Advanced Micro Devices, inc,

• Frey Jeffrey

  the Department of Electrical Engineering, University of Maryland, College Park

• Peng Jack

  The Non-volatile Technology Group Integrated Technology Division Advanced Micro Devices Inc

• Longcor Steve

  The Non-volatile Technology Group Integrated Technology Division Advanced Micro Devices Inc

関連論文

• An Integrated Efficient Method for Deep-Submicron EPROM/Flash Device Simulation Using Energy Transport Model (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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