Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)

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概要

• 論文の詳細を見る

• A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K-300 K were investigated. The common emitter mode current gain obtained was 76 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.

• 社団法人電子情報通信学会の論文
• 1994-01-25

著者

• Yoshimoto Tomomi

  The School Of Engineering Hokkaido Tokai University

関連論文

• Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)

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