High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)

概要

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Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 Å and a maximum cut-off frequency of 31 GHz were achieved.
社団法人電子情報通信学会の論文
1993-04-25