Silicon Integrated Injection Logic Operating up to 454℃ (Special Issue on ASICs for Automotive Electronics)
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概要
- 論文の詳細を見る
In order to develop silicon ICs operating up to above 450℃, Integrated Injection Logic (IIL) was chosen. A new structure for IIL was designed through experimental and theoretical studies of pn junctions, transistors, and IIL at high temperatures. A 5-μm design rule was used. The new IIL was fabricated by a specially developed combined process of ion implantation and low temperature epitaxy. The IIL was fully operational from room temperature to 454℃, and the output amplitude of a nine-stage ring oscillator was about 30 mV at ℃. The minimum delay time of the IIL was 22 nsec at 454℃. The minimum power-delay product was 11 pJ and was one-third of that for IILs fabricated by 10-μm rule at 50℃.
- 社団法人電子情報通信学会の論文
- 1993-12-25
著者
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Migitaka M
Toyota Technological Inst. Nagoya Jpn
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Migitaka Masatoshi
Toyota Technological Institute
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Takeuchi Masayoshi
Toyota Technological Institute
関連論文
- Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths
- Silicon Integrated Injection Logic Operating up to 454℃ (Special Issue on ASICs for Automotive Electronics)