High-Frequency Device-Modeling Techniques for RF-CMOS Circuits (Special Section on Analog Circuit Techniques Supporting the System LSI Era)

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概要

• 論文の詳細を見る

• Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance parameter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequacy of the proposed device-modeling techniques.

• 社団法人電子情報通信学会の論文
• 2001-02-01

著者

• Fujii Fumie

  The Semiconductor Company Toshiba Corp.

• Fujimoto Ryuichi

  The Corporate Research & Development Center Toshiba Corp.

• TANIMOTO Hiroshi

  the Corporate research & Development Center, Toshiba Corporation

• WATANABE Osamu

  the Corporate Research & Development Center, Toshiba Corp.

• KAWAKITA Hideyuki

  the Semiconductor Company, Toshiba Corp.

• Kawakita Hideyuki

  The Semiconductor Company Toshiba Corp.

• Tanimoto Hiroshi

  The Corporate Research & Development Center Toshiba Corp.:(present Address) The Department Of El

• Watanabe Osamu

  The Corporate Research & Development Center Toshiba Corp.

関連論文

• A Low Offset 1.9-GHz Direct Conversion Receiver IC with Spurious Free Dynamic Range of over 67 dB (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
• High-Frequency Device-Modeling Techniques for RF-CMOS Circuits (Special Section on Analog Circuit Techniques Supporting the System LSI Era)

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