A Nonlinear GaAs FET Model Suitable for Active and Passive MM-Wave Applications(Special Section on Analog Circuit Techniques and Related Topics)
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概要
- 論文の詳細を見る
This paper proposes an improved nonlinear FET model along with its parameter extraction procedure suitable for the accurate prediction of inter-modulation product's levels(IM)and spurious responses in active and passive applications.This new model allows accurate capture of the drain current behavior and its derivatives with respect to the gate voltage and the drain voltage in the both the saturated and linear regions of the I-V biasing domain.It was found that this model accurately predicts the bias-dependent S-parameters as well as IM's levels for both amplifier and mixer applications up to mm-wave frequencies.
- 社団法人電子情報通信学会の論文
- 2000-02-25
著者
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Ghannouchi M.fadhel
The Electrical And Computer Engineering Department Ecole Polytechnique
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Fujii K
Ntt Microsystem Integration Laboratories Ntt Corporation
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Yabe H
The Department Of Communications And Systems Eng. University Of Electro-communications
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Fujii Kohei
Japan Radio Co. Ltd.
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Hara Yasuhiko
Japan Radio Co. Ltd.
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Yakabe T
Univ. Electro-communications Chofu‐shi Jpn
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YAKABE Toshiyuki
Department of Information and Communication Engineering, University of Electro-Communications
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YABE Hatsuo
Department of Information and Communication Engineering, University of Electro-Communications
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Yakabe Toshiyuki
Department Of Information & Communication Engineering University Of Electro-communications
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