Barrier Metal Effect on Electro- and Stress-Migration (Special Section on Reliability)

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概要

• 論文の詳細を見る

• A new effect of barrier metal laid under 1st aluminum layer on electromigration has been found in interconnect vias. This effect can be explained by Si nodules at vias. Stress induced open failure occurred at viaholes and depends on the size of the vias. Stress-migration at vias can be prevented by TiN barrier metal between 1st and 2nd metals. Reliability of electro-and stress-migration at interconnect vias can be explosively improved by using TiN barrier metal.

• 社団法人電子情報通信学会の論文
• 1994-01-25

著者

• Wada T

  Semiconductor Group Matsushita Electronics Corporation

• Wada Tetsuaki

  Semiconductor Group, Matsushita Electronics Corporation

関連論文

• Barrier Metal Effect on Electro- and Stress-Migration (Special Section on Reliability)

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