Transmission over 80km at 10Gb/s Using the Amplifier- and Modulator-Integrated Laser Diode(Optical Active Devices and Modules, <Joint Special Section>Recent Progress in Optoelectronics and Communications)
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概要
- 論文の詳細を見る
We demonstrated the transmission over 80km at 10Gb/s by using the amplifier and electroabsorption-modulator integrated laser diode. Tilt-facet antireflection window is implemented, inside of which a monitor photodiode is monolithically integrated for accurate power regulation. To better control the amplifier-input power and to reduce the feedback of the amplified spontaneous emission, an attenuator is incorporated by means of the inner-window. By amplifying the modulated signal and compensating modulator-chirp by gain-saturation in the amplifier, high power optical transmission is achieved from a device with -10dB attenuation at total laser and amplifier currents of 200mA.
- 社団法人電子情報通信学会の論文
- 2005-05-01
著者
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Kim Young
Telecommunication R&d Center Samsung Electronics Co.
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Jang Dong
Telecommunication R&d Center Samsung Electronics Co.
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Kang Byung
Telecommunication R&d Center Samsung Electronics Co.
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KIM In
Telecommunication R&D Center, Samsung Electronics Co.
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BAE Yu
Telecommunication R&D Center, Samsung Electronics Co.
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PARK Byeonghoon
Telecommunication R&D Center, Samsung Electronics Co.
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LEE Sang
Telecommunication R&D Center, Samsung Electronics Co.
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Bae Yu
Telecommunication R&d Center Samsung Electronics Co.
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Lee Sang
Telecommunication R&d Center Samsung Electronics Co.
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Park Byeonghoon
Telecommunication R&d Center Samsung Electronics Co.
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Kim In
Telecommunication R&d Center Samsung Electronics Co.
関連論文
- Transmission over 80km at 10Gb/s Using the Amplifier- and Modulator-Integrated Laser Diode(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
- On Practical Implementation of the PIC Algorithm in Asynchronous CDMA Systems(Wireless Communication Technology)