RFCV Test Structure Design for a Selected Frequency Range(<Special Section>Microelectronic Test Structures)

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概要

• 論文の詳細を見る

• The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model, we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements.

• 社団法人電子情報通信学会の論文
• 2005-05-01

著者

• Mercha Abdelkarim

  Inter-university Microelectronics Center (imec)

• JEAMSAKSIRI Wutthinan

  Inter-university Microelectronics Center (IMEC)

• RAMOS Javier

  Inter-university Microelectronics Center (IMEC)

• DECOUTERE Stefaan

  Inter-university Microelectronics Center (IMEC)

• CUBAYNES Florence

  Philips Research Leuven

関連論文

• RFCV Test Structure Design for a Selected Frequency Range(Microelectronic Test Structures)
• Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions

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