Compact CMOS Modelling for Advanced Analogue and RF Applications(<Special Section>Analog Circuit and Device Technologies)

概要

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The rapid down-scaling of minimum feature size in CMOS technologies has boosted the RF performance, thereby opening up the RF application area to CMOS. The concurrent reduction of supply voltage pushes the MOSFETs used in circuit design more and more into the moderate-inversion regime of operation. As a consequence, compact MOS models are needed that are accurate in all operating regimes, including the moderate-inversion regime. Advanced analogue applications require accurate modelling of distortion, capacitances and noise. RF applicationof MOSFETs require the extension of this accurate modelling up to high frequencies and in addition accurate modelling of impedance levels and power gain. The implications for compact MOS models will be discussed, together with the state-of-the-art in compact MOS modelling. Special attention will be paid to some well-known circuit examples, and the compact model requirements needed for a correct description. Where relevant MOS Model 11 will be used to illustrate the discussion.
社団法人電子情報通信学会の論文
2004-06-01