Low Temperature Deposition of Indium Tin Oxide Thin Films by Low Voltage Sputtering in Various Rare Gases(<Special Section>Recent Progress in Oxide Thin Films by Sputtering)

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概要

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• Indium tin oxide (ITO) films were deposited at a temperature below 50℃ by a low-voltage sputtering system. The sputtering voltage was fixed at 100V and Ar, Kr, and Xe were used as the sputtering gases. Compared with the sputtering in Ar gas, the sputtering in Kr or Xe gas caused a significant suppression of crystallization of the deposited film and resulted in the formation of amorphous films. These films had much lower resistivities than the films deposited using Ar gas, since the Hall mobility of the films had a larger value. Typical Hall mobility and carrier densityare 50cm^2/Vsec, and 5 × 10^<20> cm^<-3>, respectively. This improvement was attributable to the reduction of high-energy particle bombardment to the film surface in the sputtering. These films are stable at a temperature below 150℃, and crystallization occurs at a temperature above 150℃.

• 社団法人電子情報通信学会の論文
• 2004-02-01

著者

• Shimizu Hidehiko

  Faculty Of Engineering Niigata University

• Hoshi Y

  Faculty Of Engineering Tokyo Polytechnic University

• HOSHI Yoichi

  Faculty of Engineering, Tokyo Polytechnic University

関連論文

• Composition and Structure Control of Cu-Al-O Films Prepared by Reactive Sputtering and Annealing
• Low Temperature Deposition of Indium Tin Oxide Thin Films by Low Voltage Sputtering in Various Rare Gases(Recent Progress in Oxide Thin Films by Sputtering)
• Characterization of CuAlO2 Thin Films Prepared on Sapphire Substrates by Reactive Sputtering and Annealing
• Composition and Structure Control of Cu–Al–O Films Prepared by Reactive Sputtering and Annealing

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