AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme(Special Issue on Microwave and Millimeter Wave Technology)

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概要

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• The first implementations of X-band Al-GaN/GaN HEMT single-ended frequency doublers are presented in this paper. Two types of fundamental frequency signal reflector schemes have been demonstrated for the frequency doubler application. Open-circuited quarter-wavelength microstrip line at the fundamental frequency is utilized for the reflector in a conventional way. In the other architecture a printed antenna is employed as a radiator as well as a novel fundamental frequency reflector. A microstrip rectangular patch antenna operating at the second harmonic frequency of the doubler was designed and integrated with AlGaN/GaN HEMT based on active integrated antenna design concept. Using AlGaN/GaN HEMT with 1 mm gate periphery, two 4 to 8 GHz frequency doublers were designed by the described design methodologies, fabricated, and tested. For the conventional frequency doubler, a conversion gain of 0.6 dB and with an output power of 15 dBm was observed. A conversion gain of 5 dB and an output power of 25 dBm with embedded antenna gain were achieved at a drain voltage of 12V for the doubler integrated with the patch antenna.

• 一般社団法人電子情報通信学会の論文
• 2003-08-01

著者

• Leong Kevin

  University Of California At Los Angeles Department Of Electrical Engineering

• Itoh Tatsuo

  University Of California At Los Angeles Department Of Electrical Engineering

• CHUNG Younkyu

  University of California at Los Angeles, Department of Electrical Engineering

• Chung Younkyu

  University Of California At Los Angeles Department Of Electrical Engineering

関連論文

• AlGaN/GaN HEMT X-Band Frequency Doublers with Novel Fundamental Frequency Reflector Scheme(Special Issue on Microwave and Millimeter Wave Technology)

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