Millimeter-Wave InP/InGaAs Photo-HBT and Its Application to Optoelectronic Integrated Circuits(Special Issue on Recent Progress in Microwave and Millimeter-wave Photonics Technologies)

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In this paper, we describe the design, optimization and fabrication of high-speed InP/InGaAs heterojunction bipolar phototransistors (photo-HBTs) with both optical cut-off frequency (F_c) and optical gain (G_<opt>) higher than 100GHz and 30 dB, respectively. Small- and large-signal models of the photo-HBT have been developed in order to design optoelectronic monolithically integrated circuits (OEIC) using this device. Integrated circuits such as optoelectronic narrow-band amplifiers at 28 GHz with a transimpedance gain of 50 dBΩ and optoelectronic upconverting mixers at 28 and 42 GHz with a mixer conversion gain of 17.8dB and 9.2dB respectively, were fabricated. The performances of the mixer circuits were superior to those of individual photo-HBT mixer. These optoelectronic integrated circuits based on InP photo-HBTs are attractive building blocks for realizing compact and cost-effective photoreceivers for millimeterwave radio-over-fiber links.
社団法人電子情報通信学会の論文
2003-07-01