Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method(<Special Issue>the IEEE International Coference on SISPAD '02)

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概要

• 論文の詳細を見る

• A new analysis method for random dopant induced threthold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate V_t fluctuations due to statistical variation of pocket dopant profile in 0.1μm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFET's efficiently.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Ito Sanae

  Semiconductor Leading Edge Technologies Inc.

• Suzuki Kaina

  Semiconductor Leading Edge Technologies Inc.

• Oda Yoshinori

  Semiconductor Leading Edge Technologies Inc.

• OHKURA Yasuyuki

  Semiconductor Leading Edge Technologies,Inc.

• AMAKAWA Hirotaka

  Semiconductor Leading Edge Technologies,Inc.

• NISHI Kenji

  Semiconductor Leading Edge Technologies,Inc.

• Nishi Kenji

  Semiconductor Leading Edge Technologies Inc.

• Amakawa H

  Semiconductor Leading Edge Technologies Inc.

• Ohkura Yasuyuki

  Semiconductor Leading Edge Technologies Inc.

関連論文

• Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method(the IEEE International Coference on SISPAD '02)
• In vitro properties and in vivo behavior of technetium-99m labeled fibrinogens
• Reformulation of DWBA Form Factor for Heavy Ion Transfer Reactions

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