Analysis of Injection Current with Electron Temperature for High-K Gate Stacks(<Special Issue>the IEEE International Conference on SISPAD '02)

概要

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Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W. K. B. method to understand the impact of the injection current from the drain edge.
社団法人電子情報通信学会の論文
2003-03-01