Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

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• A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.

• 2003-10-01

著者

• Kanel Hans

  Politecnico Di Milano

• Ramm Juergen

  Unaxis Semiconductors

関連論文

• Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool(Heterostructure Microelectronics with TWHM2003)

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