Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

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• We study the advantages and limitations of InP/GaAsSb/InP DHBTs for high-speed digital circuit applications. We show that the high-current performance limitation in these devices is electrostatic in nature. Comparison of the location of collector current blocking in various collector designs suggests a smoother, more gradual onset of blocking effects in type-Il collectors. A comparison of collector current blocking effects between InP/GaAsSb based and various designs of InP/GalnAs-based DRBTs provides support for our analysis.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• Bolognesi C.

  Simon Fraser University

• Dvorak Martin

  Agilent Technologies

• Watkins Simon

  Simon Fraser University

関連論文

• Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)(Heterostructure Microelectronics with TWHM2003)

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