Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)(<Special Issue>Heterostructure Microelectronics with TWHM2003)
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概要
- 論文の詳細を見る
We study the advantages and limitations of InP/GaAsSb/InP DHBTs for high-speed digital circuit applications. We show that the high-current performance limitation in these devices is electrostatic in nature. Comparison of the location of collector current blocking in various collector designs suggests a smoother, more gradual onset of blocking effects in type-Il collectors. A comparison of collector current blocking effects between InP/GaAsSb based and various designs of InP/GalnAs-based DRBTs provides support for our analysis.
- 社団法人電子情報通信学会の論文
- 2003-10-01
著者
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Bolognesi C.
Simon Fraser University
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Dvorak Martin
Agilent Technologies
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Watkins Simon
Simon Fraser University