Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System(Special Issue on Silicon RF Device & Integrated Circuit Technologies)

概要

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A highly efficient power MOSFET has been developed for 3.6 V RF power amplifiers for use in GSM (Global Systems for Mobile communications) cellular telephone systems (880-915 MHz). It was fabricated using a 0.45-μm CMOS LSI process with an Al-shorted metal-silicide/Si gate structure instead of a conventional 0.8-μm Mo-gate. The resulting power MOSFET has an on-state resistance of 6.9 Ω・mm, a breakdown voltage of 13 V, and a cut-off frequency of 11 GHz. The RF performance of the device achieved an output power (P_<out>) of 1.8 W, a power gain of 10 dB, and a power-added efficiency (η_<add>) of 60%. In addition, an RF power module using our proposed power MOSFET achieved an output power of 4 W and a total efficiency of 50%.
社団法人電子情報通信学会の論文
2002-07-01