Nonlinear Analysis of Multiple Ion-Implanted GaAs FETs Using Volterra Series Approach

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概要

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• A nonlinear Volterra-series analysis of multiple ion-implanted GaAs FETs is given that relates carrier profile parameters of ion-implantation to nonlinear rf characteristics of a FET.Expressions for nonlinear coefficients of transconductance are derived from drain current-voltage characteristics of a multiple ion-implanted FET. Nonlinear transfer functions(NLTFs)are then obtained using Volterra series approach. Using these NLTFs third-order intermodulation distortion and power gain are explicitly given. A good agreement has been found between the calculation and the measurement for a medium power GaAs FET with a total gate width of 800μm operated at 10-dB back off, verifying the usefulness of the present analysis.

• 一般社団法人電子情報通信学会の論文
• 2001-09-01

著者

• Yanagawa Shigeru

  Microwave Solid-state Engineering Department Komukai Operations Information And Industrial Systems &

関連論文

• Nonlinear Analysis of Multiple Ion-Implanted GaAs FETs Using Volterra Series Approach

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