Electron Transport in Metal-Amorphous Silicon-Metal Memory Devices(Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
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概要
- 論文の詳細を見る
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V(Cr/p^+a-Si:H/V)analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13K to 300K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials(i.e.discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p^+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
- 社団法人電子情報通信学会の論文
- 2001-09-01
著者
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Hu Jian
The School Of Engineering Napier University Edinburgh
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Snell Anthony
The Department Of Electronics And Electrical Engineering Edinburgh University
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Hajto J
The School Of Engineering Napier University Edinburgh
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HAJTO Janos
The School of Engineering, Napier University Edinburgh
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ROSE Mervyn
The Department of Applied Physics and Electronics & Manufacturing Engineering, University of Dundee
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Rose Mervyn
The Department Of Applied Physics And Electronics & Manufacturing Engineering University Of Dund
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Hajto Janos
The School Of Engineering Napier University Edinburgh