Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs

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概要

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• The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (C_<gs>) and drain-source current (I_<ds>) for the FETs. However, previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (C_<gs> or I_<ds>) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of C_<gs> and I_<ds> simultaneously. We also investigate the third-order intermodulation distortion (IMD_3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD_3 is found at the minimum source resistance (R_s) and maximum load resistance (R_L) in the equivalent output power (P_<out>) contour. Simulated results are compared with the load and source pull data, with good agreement.

• 社団法人電子情報通信学会の論文
• 2001-08-01

著者

• Lee Soong-hak

  The Author Is With Lti Lab.

• Jeong Yoon-ha

  The Authors Are With The Department Of Electronic And Electrical Engineering Pohang University Of Sc

• Ahn K‐h

  The Authors Are With The Department Of Electronic And Electrical Engineering Pohang University Of Sc

• AHN Kwang-Ho

  The authors are with the Department of Electronic and Electrical Engineering, Pohang University of S

関連論文

• Effects of Source and Load Impedance on the Intermodulation Distortion Products of GaAs FETs

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