Electrical Transport in Nano-Scale Silicon Devices
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概要
- 論文の詳細を見る
This paper reviews our experimental results for electrical transport properties of nano-scale silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). We used very small devices produced using 10-nm-scale lithographic techniques: electrically variable shallow junction MOSFETs (EJ-MOSFETs) and lateral hot-electron transistors (LHETs). With LHETs we succeeded in directly detecting the hot-electron current and estimated the characteristic length to be around 25 nm. We also investigated the energy relaxation mechanism by performing measurements at various applied voltages and temperatures. Further more, we clearly observed the tunneling current between the source and drain (source-drain tunneling) in an 8-nm-gate-length EJ-MOSFET. Based on these experimental results, we predict the limitation of MOSFET miniaturization to be around 5 nm in the source-drain tunneling scheme.
- 一般社団法人電子情報通信学会の論文
- 2001-08-01
著者
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Kawaura Hisao
The Authors Are With The System Devices And Fundamental Research Nec Corporation
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Sakamoto Toshitsugu
The Authors Are With The System Devices And Fundamental Research Nec Corporation