Thermal Stability of ZrN Barrier in W/ZrN/Poly-Si Gate Electrode Configuration

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概要

• 論文の詳細を見る

• An experimental report was presented on a high temperature performance of a ZrN barrier in the model system of W/ZrN/poly-Si as a poly-metal gate electrode configuration. The absence of interdiffusion, reaction and/or mixing of the ZrN barrier with adjoining W and poly-Si layers resulted in a successful demonstration of the thermally stable poly-metal gate electrode configuration which tolerated annealing at 850℃ for 1 h.

• 社団法人電子情報通信学会の論文
• 2001-05-01

著者

• Noya Atsushi

  Dept. Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Technology

• Takeyama M

  Kitami Inst. Of Technol. Kitami‐shi Jpn

• TAKEYAMA Mayumi

  Dept. of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technolo

関連論文

• Thermal Stability of ZrN Barrier in W/ZrN/Poly-Si Gate Electrode Configuration

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