RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

概要

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In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3μm gate length yield f_T = 43GHz and f_<max> = 78GHz(s.i.SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20GHz with e.g. output power levels above 3 Watt cw at 15GHz for a single 1.6mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passwivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation
社団法人電子情報通信学会の論文
2001-10-01