Tunneling at the Emitter Periphery in Silicon-Germanium HBTs(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

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• The low bias region of the base current has been studied in SiGe HBTs and shown to arise from tunneling at the emitter periphery. Tunneling also describes the reverse bias base-emitter current, which we believe is enhanced by mid-gap strates. The reverse bias causes damage to the base-emitter region, increasing the base current. We also show that after a short period of severe reverse bias stress the base current displays random telegraph signals. These phenomena are often observed in silicon bipolar transistors, confirming that the incorporation of SiGe has not produced any other undesirable characteristics.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Mcalister Sean

  The Institute For Microstructural Sciences National Research Council Of Canada

• Storey Craig

  The Institute For Microstructural Sciences National Research Council Of Canada

• KOVACIC Stephen

  SiGe Semiconductor

• LAFONTAINE Hugues

  SiGe Semiconductor

関連論文

• Tunneling at the Emitter Periphery in Silicon-Germanium HBTs(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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