SiGe-HBTs for Bipolar and BICMOS-Applications : From Research to Ramp up of Production(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

概要

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We report the process flow and technological features of Infineons' 75GHz bipolar technology, which is characterized by a double-poly self-aligned transistor structure and a SiGe base, grown by selective epitaxy. The dependence of the epitaxial deposition on growth conditions and the influence of layout on the growth process is discussed, especially for different kinds of reticles: bipolar-ICs, BICMOS-ICs and discrete semiconductors. Finally, our monitoring concept for the control of the selective SiGe epitaxy is presented and compared with alternative methods of process control.
社団法人電子情報通信学会の論文
2001-10-01