Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Mcalister S

  The National Research Council Of Canada

• Mckinnon W

  The National Research Council Of Canada

• Driad R

  The National Research Council Of Canada

• McKINNON William

  the National Research Council of Canada

• DRIAD Rachid

  the National Research Council of Canada

• STOREY Craig

  the National Research Council of Canada

• RENAUD Anthony

  the National Research Council of Canada

• McALISTER Sean

  the National Research Council of Canada

• GARANZOTIS Ted

  Nortel Networks

• SPRINGTHORPE Anthony

  Nortel Networks

• Storey C

  The National Research Council Of Canada

• Renaud Anthony

  The National Research Council Of Canada:jds Uniphase

関連論文

• Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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