ACPR Design of Power Amplifier for Wireless Handset Applications Using E-Mode GaAs HJFET (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• By using the gain expansive and compressive characteristics of two FET to compensate for the phase shift at large signal, one can greatly improve Adjacent Channel Power Ratio (ACPR) of the power amplifier. This 3 to 5 dB improvement result was verified experimentally by selecting the biasing point and the gain level of the first and second stage amplifires. This MCM circuit-level techniques is more attractive to achieve low cost and good ACPR design. As examples, some novel high efficiency power amplifiers with good ACPR for the handset applications are developed by this method. Those mass producible 0.12 cc volume(7.8 x 7.8 x 2.0 mm) multi-chip module power amplifiers (MCM PA) employ state-of-the-art enhancement GaAs HJFET devices that need only a single power supply.

• 一般社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Geng Hui

  Naito Densei Machida Manufacture Corporation

• HASEGAWA Yasuaki

  Compound Semiconductor Device Division, NEC Corporation

• Hasegawa Yasuaki

  Compound Semiconductor Device Division Nec Corporation

関連論文

• ACPR Design of Power Amplifier for Wireless Handset Applications Using E-Mode GaAs HJFET (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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