Hydrogen Degradation of InP HEMTs and GaAs PHEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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概要

• 論文の詳細を見る

• We have carried out a systematic study of the impact of hydrogen exposure on InP HEMTs and GaAs PHEMTs with Ti/Pt/Au gates. Hydrogen poisoning is an important reliability concern in these devices. Our work has provieded ample evidence supporting the formation of TiH inside the gate structure upon exposure of HEMTs to a hydrogen environment. The resulting volume expansion of the gate stresses the semiconductor heterostructure underneath and, through the piezoelectric effect, results in a shift of the threshold voltage of the device. This mechanism is largely reversible. Independently of this, we have found that H_2 upsets the stoichiometry of the exposed InAlAs barrier in the recessed region right next to the gate. This irreversibly changes the extrinsic sheet carrier concentration in the channel and affects other figures of merit such as the breakdown voltage. This understanding should be instrumental in identifying device-level solutions to this problem.

• 社団法人電子情報通信学会の論文
• 2001-10-01

著者

• Blanchard Roxann

  Currently With Analog Devices

• Alamo Jesus

  The Mit

• MERTENS Samuel

  the MIT

関連論文

• Hydrogen Degradation of InP HEMTs and GaAs PHEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)

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