Atomic Scale Simulation of Extended Defects : Monte Carlo Approach (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• This paper reports a Monte Carlo calculation of the bimolecular reaction of arsenic precipitation. As the accuracy of the numerical solution for the coupled rate equations strongly depends on the size of grid spacing, it is necessary to choose adequate number of rate equations in order to understand the behavior of the extended defects. Therefore, we developed a general kinetic Monte Carlo model for the extended defects, which explicitly takes the time evolution of the size density of the extended defects into account. The Monte Carlo calculation exhibits a quantitative agreement with the experimental data for deactivation, and successfully reproduces the rapid deactivation at the beginning phase followed by slow deactivation in the subsequent steps.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Won Taeyoung

  Device Physics And Modeling Team Memory R&d Division Hyundai Electronics Ltd.

• Lee Jaehee

  the School of Electrical and Computer Engineering, Inha University

• Lee Jaehee

  The School Of Electrical And Computer Engineering Inha University

関連論文

• Atomic Scale Simulation of Extended Defects : Monte Carlo Approach (Special lssue on SISPAD'99)

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