Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE (Special lssue on SISPAD'99)
スポンサーリンク
概要
- 論文の詳細を見る
A first-order investigation of the transport and energy-loss processes in silicon dioxide is worked out in the frame of the Spherical-Harmonics solution of the Boltzmann Transport Equation. The SiO_2 conduction band is treated as a single-valleyspherical and parabolic band. The relevant scattering mechanisms are modeled consistently : both the polar and nonpolar electron-phonon scattering mechanisms are considered. The scattering rates for each contribution are analyzed in comparison with Monte Carlo data. A number of macroscopic transport properties of electrons in SiO_2 are worked out in the steady-state regime for a homogeneous bulk structure. The investigation shows a good agreement in comparison with experiments in the low-field regime and for different temperatures.
- 社団法人電子情報通信学会の論文
- 2000-08-25
著者
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Reggiani Susanna
The Dipartimento Di Elettronica Informatica E Sistemistica (deis) Of The University Of Bologna
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Rudan M
Univ. Of Bologna Bologna Ita
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Scozzoli Lucia
the Dipartimento di Elettronica, Informatica e Sistemistica (DEIS) of the University of Bologna
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Rudan Massimo
the Dipartimento di Elettronica, Informatica e Sistemistica (DEIS) of the University of Bologna
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Scozzoli Lucia
The Dipartimento Di Elettronica Informatica E Sistemistica (deis) Of The University Of Bologna