10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)

スポンサーリンク

概要

• 論文の詳細を見る

• 10-Gbit/s monolithic receiver OEIC's for 1.55μm optical transmission systems were fabricated using a stacked layer structure of p-i-n photodiodes and HEMT's grown on InP substrates by single-step MOVPE. A receiver OEIC with a large O/E conversion factor was obtained by adding a three-stage differential amplifier to a conventional feedback amplifier monolithically integrated with a surface-illuminated p-i-n photodiode. The circuit configuration gave a preamplifier a transimpedance of 60dBΩ. The receiver OEIC achieved error-free operation at 10Gbit/s without a postamplifier even with the optical input as low as -10.3dBm because of its large O/E conversion factor of 890V/W. A two-channel receiver OEIC array for use in a 10Gbit/s parallel photoreceiver module based on a PLC platform was made monolithically integrating multimode WGPD's with HEMT preamplifiers. The side-illuminated structure of the WGPD is suitable for integration with other waveguide-type optical devices. The receiver OEIC arrays were fabricated on a 2-inch wafer with achieving excellent uniformity and a yield over 90%:average transimpedance and average 3-dB-down bandwidth were 43.8dBΩ and 8.0GHz. The two channels in the receiver OEIC array also showed sensitivities of -16.1dBm and -15.3dBm at 10Gbit/s. The two-channel photoreceiver module was constructed by assembling the OEIC array on a PLC platform. The frequency response of the module was almost the same as that of the OEIC chip and the crosstalk between channels in the module was better than -27dB in the frequency range below 6GHz. These results demonstrate the feasibility of using our receiver OEIC's in various types of optical receiver systems.

• 社団法人電子情報通信学会の論文
• 2000-06-25

著者

• Akatsu Yuji

  Department Of Electrical Engineering Faculty Of Engineering Hokkaido University

• Akatsu Yuji

  The Authors Are With Ntt Photonics Laboratories

• Kozen A

  The Author Is With Ntt Electronics

• Kato Kazutoshi

  The Authors Are With Ntt Photonics Laboratories

• Takahata Kiyoto

  The Authors Are With Ntt Photonics Laboratories

• Muramoto Yoshifumi

  Ntt Photonics Laboratories Ntt Corporation

• Muramoto Yoshifumi

  The Authors Are With Ntt Photonics Laboratories

• KOZEN Atsuo

  The author is with NTT Electronics

• AKAHORI Yuji

  The authors are with NTT Photonics Laboratories

関連論文

• Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
• Deep Electron Traps in Undoped GaAs Grown by MOCVD
• 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
• 10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT's(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)

スポンサーリンク