Optoelectronic Activities of Dislocations in Gallium Nitride Crystals(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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概要

• 論文の詳細を見る

• In order to get a perspective to the future of GaN materials, theoretical and experimental knowledge of the optoelectronic activities of dislocations in hexagonal GaN have been reviewed. Although the dislocations in GaN have been thought to be not quite harmful, a growing number of evidences have been accumulated for the intrinsic noxiousness of the dislocations. There are some inconsistencies between experimental data reported by different groups or at different dates, which can be reconciled by a proposed simple model that takes into account the trapping of free excitons. A transmission electron microscopic study revealed that some type of dislocations exhibit the recombination enhanced dislocation glide effect, suggesting the nonradiative recombination activity of the fresh dislocations. Such intrinsic activities of dislocations in GaN, in both electronical and mechanical respects, will possibly cause great difficulties in optoelectronic devices based on this material when the crystal quality becomes improved.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• Mera Yutaka

  The Authors Are With The Department Of Applied Physics The University Of Tokyo

• MAEDA Koji

  The authors are with the Department of Applied Physics, The University of Tokyo

• Maeda Koji

  The Authors Are With The Department Of Applied Physics The University Of Tokyo

関連論文

• Optoelectronic Activities of Dislocations in Gallium Nitride Crystals(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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