Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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概要

• 論文の詳細を見る

• Laser diodes in the (Al, Ga, In) N system are attractive for many applications. Due to the wurtzite crystal structure, cleaved facets are not easily produced. We have investigated distributed feedback (DFB) laser diodes employing embadded dielectric gratings with the grating located above the active region. The dielectric gratings are incorporated via epitaxial lateral overgrowth. The DFB laser diodes had reduced threshold current densities over the etched cavity devices, with a minimum of 15kA/cm^2. The spectral emission width was considerably reduced for the DFB devices. Voltages for the DFB devices were high due to the presence of the Si_3N_4 grating within the p-type material.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• Denbaars Steven

  The Authors Are With The Materials And Electrical Computer Engineering Departments University Of Cal

• Abare A

  The Authors Are With The Materials And Electrical Computer Engineering Departments University Of Cal

• Coldren L

  The Authors Are With The Materials And Electrical Computer Engineering Departments University Of Cal

• ABARE Amber

  The authors are with the Materials and Electrical Computer Engineering Departments, University of Ca

• COLDREN Larry

  The authors are with the Materials and Electrical Computer Engineering Departments, University of Ca

関連論文

• Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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