Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors

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概要

• 論文の詳細を見る

• Precise simulation of non-quasi-static(NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.

• 社団法人電子情報通信学会の論文
• 2000-12-25

著者

• Niitsu Y

  System Lsi Development Center Advanced Microelectronics Center Toshiba Corp.

• NIITSU Yoichiro

  System LSI Development Center, Advanced Microelectronics Center, Toshiba Corp.

関連論文

• Non-Quasi-Static Small Signal Model of Four-Terminal MOS Transistors

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