Dynamic Bend Mode in Pi-Cells(Special Issue on Electronic Displays)
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概要
- 論文の詳細を見る
After a bend structure has been obtained through application of an appropriate voltage, a pi-cell exhibits one of two stable structures : a bend structure if the applied bias is above a certain threshold(〜2V), and a twist structure at a lower voltage. For use in an optical device, the pi-cell must be operated with the bend structure. It was found, however, that when the bias is switched quickly to a level lower than the threshold, a metastable structure exists for a few hundreds of milliseconds before relaxing to a twist structure. From dynamic optical transmittance analysis, this structure is considered to have a bend configuration. The temporary bend structure persists at lower voltages because it takes a while to initiate an energy redistribution from the bend structure to the twist. This is considered as a novel physical state, and is called a "dynamic bend structure." It enables the pi-cell to be operated even if the bias is below the threshold voltage, provided that the device is biased at higher voltages for a fraction of each cycle to retain the bend structure.
- 社団法人電子情報通信学会の論文
- 2000-10-25
著者
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Miwa K
The Author Is With Ibm Japan Ltd.
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Miwa Koichi
The Author Is With Ibm Japan Ltd.
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Nakamura Hajime
The Author Is With Ibm Research Tokyo Research Lab.
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NOGUCHI Michikazu
The author is with IBM LCD Development.
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Noguchi M
The Author Is With Ibm Lcd Development.