Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)

スポンサーリンク

概要

• 論文の詳細を見る

• Silicon-based monolithic microwave integrated circuits (MMICs) present an interesting option for low-cost consumer wireless systems. SiGe/Si heterojunction bipolar transistors (HBTs) are a major driving force behind Si-based MMICs, because they offer excellent microwave performance without aggressive lateral scaling. This article reviews opportunities for receiver frontend components (low-noise amplifiers and mixers) using SiGe HBTs.

• 社団法人電子情報通信学会の論文
• 1999-11-25

著者

• SCHUMACHER Hermann

  Department of Electron Devices and Circuits , University of Ulm

• Schumacher H

  Univ. Ulm Ulm Deu

• ERBEN Uwe

  Department of Electron Devices and Circuits, University of Ulm

• DURR Wolfgang

  Department of Electron Devices and Circuits, University of Ulm

• SCHAD Kai-Boris

  Department of Electron Devices and Circuits, University of Ulm

• Erben Uwe

  Department Of Electron Devices And Circuits University Of Ulm:(present Address)temic Semiconductor G

• Durr Wolfgang

  Department Of Electron Devices And Circuits University Of Ulm:(present Address)siemens Ag Ulm

• Schad Kai-boris

  Department Of Electron Devices And Circuits University Of Ulm

関連論文

• ダイヤモンドMESFETの高周波特性
• Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
• Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)

スポンサーリンク