SOI Waveguide GeSi Avalanche Pin Photodetector at 1.3 μm Wavelength

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概要

• 論文の詳細を見る

• A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) pasive waveguide is demonstrated. The absorption layer of the detector consists of alternating layers of 66A Ge_<0.44>Si_<0.56> and 480A Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0.2A/W at 1.3μm wave length.

• 社団法人電子情報通信学会の論文
• 1998-10-25

著者

• Wang Kang

  The Electrical Engineering Deparment University Of California Los Angeles

• Yoshimoto T

  The Electrical Engineering Deparment University Of California Los Angeles:the Department Of Electron

• YOSHIMOTO Tomomi

  the Electrical Engineering Deparment, University of California Los Angeles

• THOMAS Shawn

  the Electrical Engineering Deparment, University of California Los Angeles

• JALALI Bahram

  the Electrical Engineering Deparment, University of California Los Angeles

• Thomas Shawn

  The Electrical Engineering Deparment University Of California Los Angeles

• Jalali Bahram

  The Electrical Engineering Deparment University Of California Los Angeles

関連論文

• SOI Waveguide GeSi Avalanche Pin Photodetector at 1.3 μm Wavelength

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