GMR and Characterization of Microstructures in Ion-Beam Cosputtered CoAg Granular Films
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概要
- 論文の詳細を見る
A series of Co_xAg_lt1-xgt (0 ≦ x ≦ 100 at.%) granular films were prepared using the ion-beam cosputtering technique at different substrate temperatures. Systematic investigations have been carried out on the giant magnetoresistance (GMR) effect and characterization of microstructures of these samples. The magnetoresistance ratio depends strongly on cobalt concentration, substrate temperature, and annealing treatment. The optimal value of GMR was observed in Co_lt22gtAg_lt78gt sample prepared at the temperature of 300 K. Microstructures of as-deposited and annealed samples were characterized by structural analyses. For Co_lt22gtAg_lt78gt sample, real-time in situ observation by TEM together with FMR spectra indicates that the size and shape of cobalt granules evolve primarily along the film plane during annealing. The results of FMR also provide that the cobalt granules remain single-domain particles after annealing at temperatures up to 700 K.
- 社団法人電子情報通信学会の論文
- 1997-09-25
著者
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Du Youwei
Institute For Solid State Physics And National Laboratory Of Solid State Microstructures Nanjing Uni
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SANG Hai
Institute for Solid State Physics and National Laboratory of Solid State Microstructures, Nanjing Un
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NI Gang
Institute for Solid State Physics and National Laboratory of Solid State Microstructures, Nanjing Un
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ZHANG ShuiYuan
Institute for Solid State Physics and National Laboratory of Solid State Microstructures, Nanjing Un
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WONG SaiPeng
the Department of Electronic Engineering, The Chinese University of Hong Kong
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KE Ning
the Department of Electronic Engineering, The Chinese University of Hong Kong
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CHEUNG WingYiu
the Department of Electronic Engineering, The Chinese University of Hong Kong
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Ni Gang
Institute For Solid State Physics And National Laboratory Of Solid State Microstructures Nanjing Uni
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Ke Ning
The Department Of Electronic Engineering The Chinese University Of Hong Kong
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Sang Hai
Institute For Solid State Physics And National Laboratory Of Solid State Microstructures Nanjing Uni
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Wong Saipeng
The Department Of Electronic Engineering The Chinese University Of Hong Kong
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Zhang Shuiyuan
Institute For Solid State Physics And National Laboratory Of Solid State Microstructures Nanjing Uni
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Cheung Wingyiu
The Department Of Electronic Engineering The Chinese University Of Hong Kong