Effect of Source Harmonic Tuning on Linearity of Power GaAs FET under Class AB Operation (Spcial Issue on Microwave Devices for Mobile Communications)

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概要

• 論文の詳細を見る

• An effect of source harmonic tuning on linearity of power GaAs FET's under class AB operation is demonstrated. To improve efficiency of the power amplifiers, GaAs FET's are often operated under class AB condition. Due to lower bias current, a class AB amplifier begins to show nonlinearity at lower input power comparing with class A operation, and as the power level of the input signal increases, however, an output power sometimes increases abruptly. From nonlinear circuit simulation, we have found this phenomenon is occurred by the distortion in gate RF voltage, and by suppressing even-order harmonics in the input circuit of GaAs FET, class AB amplifiers can be effectively linearized. In this paper, we show the condition for improving the linearity of power GaAs FET's under class AB operation by the source harmonic tuning technique.

• 社団法人電子情報通信学会の論文
• 1996-05-25

著者

• Takagi Kazutaka

  Toshiba Corporation Komukai Works

• WATANABE Shigeru

  TOSHIBA CORPORATION, Komukai Works

• TAKATSUKA Shinji

  TOSHIBA CORPORATION, Komukai Works

• KURODA Hiromichi

  TOSHIBA CORPORATION, Komukai Works

• ODA Yuji

  TOSHIBA CORPORATION, Komukai Works

• Kuroda Hiromichi

  Toshiba Corporation Komukai Works

• Takatsuka Shinji

  Toshiba Corporation Komukai Works

• Oda Yuji

  Toshiba Corporation Komukai Works

• Watanabe Shigeru

  Toshiba Corporation Komukai Works

関連論文

• Effect of Source Harmonic Tuning on Linearity of Power GaAs FET under Class AB Operation (Spcial Issue on Microwave Devices for Mobile Communications)

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