Control of Magnetic Properties and Microstructure of Thin Film Recording Media under Ultraclean Sputtering Process

スポンサーリンク

概要

• 論文の詳細を見る

• The ultraclean sputtering process (UC-process) was newly introduced in the fabrication of Co_lt62.5gtNi_lt30gtCr_lt7.5gt and Co_lt85.5gtCr_lt10.5gtTa_4 thin film media to establish a new concept in controlling microstructure. UC-process enables the realization of high coercive force H_c up to 2.7-3 kOe in both CoNiCr and CoCrTa media (15/50 nm magnetic/Cr thicknesses) without the decrement of saturation magnetization. The purification of the atmosphere during sputtering and the removal of the adsorbed oxygen impurity on the substrate surface play important roles in obtaining high H_c by applying the UC-process. This high H_c is mainly due to the realization of large magnetocrystalline anisotropy field of grains H_k^ltgraingt and low intergranular exchange coupling. UC-process realizes the adequate separation of grains by segregated grain boundaries even in media with thin Cr thickness of 2.5 nm, and enables grain size reduction without the remarkable increment in intergranular exchange coupling. In these media, the reduction of the grain size is most effective for the improvement of readback signal to media noise ratio S/Nm. In the media with grains sufficiently separated by segregated grain boundaries fabricated by the UC-process, control of grain size reduction and further increase in H_c/H_k^ltgraingt value through the decrement in intergranular magnetostatic coupling are required to obtain higher S/Nm value.

• 社団法人電子情報通信学会の論文
• 1995-11-25

著者

• Shimatsu T

  Research Institute Of Electrical Communication Tohoku University

• Shimatsu Takehito

  Faculty of Engineering, Tohoku University

• Takahashi Migaku

  Faculty of Engineering, Tohoku University

• Takahashi Migaku

  Faculty Of Engineering Tohoku University

関連論文

• Control of Magnetic Properties and Microstructure of Thin Film Recording Media under Ultraclean Sputtering Process

スポンサーリンク